IGLR70R200D2SXUMA1

IGLR70R200D2SXUMA1 is a CoolGaN™ G5 highly efficient gallium nitride (GaN) transistor designed for power conversion at 700V. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using 200mm (8-inch) wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. It is ideal for consumer applications like chargers, adapters, TV power, and home appliances.

• Qualified according to JEDEC standard, 2kV HBM ESD standards
• Enhancement mode transistor, ultra‑fast switching, no reverse‑recovery charge
• Capable of reverse conduction, low gate and output charge, superior commutation ruggedness
• Normally OFF transistor technology ensures safe operation
• Enables rapid and precise power delivery control
• Improves system efficiency and reliability
• Ensures robust performance under challenging conditions
• Drain‑source on‑state resistance is 0.2ohm typ at IG =7.1mA; ID =2.1A; Tj =25°C
• PG‑TSON‑8 package
• Operating junction temperature range from ‑40 to 150°C