IXFN360N15T2

IXFN360N15T2 is a DiscMSFT, GigaMOSTM TrenchT2, HiperFET™ power MOSFET. The device promotes device consolidation through the reduction or elimination of multiple paralleled lower current-rated MOSFET devices in high-power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon overall system simplicity, reliability, and cost. Applications include switch-mode and resonant-mode power supplies, DC-DC converters, battery chargers, synchronous rectification, uninterrupted power supplies, AC motor drives, DC choppers, and high-speed power switching applications.

• N-channel enhancement mode, avalanche rated, fast intrinsic diode
• Eliminates multiple paralleled lower current rated MOSFET devices
• Provides the ability to control more power within a smaller footprint
• Improves overall system reliability and cost
• Low RDS(ON) and gate charge (Qg), avalanches capabilities
• Incorporates Littelfuse HiPerFET™ technology for fast power switching performance
• International standard package, miniBLOC, with aluminium nitride isolation
• 150V drain source voltage and 5V gate source threshold voltage max
• 10V Rds(on) test voltage, 310A continuous drain current Id
• 2500V isolation voltage, 1070W power dissipation