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IXFN200N07
MOSFET Transistor, HiPerFET, N Channel, 200 A, 70 V, 6000 µohm, 10 V, 4 V
不再生產
產品訊息
製造商產品編號IXFN200N07
訂購代碼4905659
技術資料表
Channel TypeN Channel
Continuous Drain Current Id200A
Drain Source Voltage Vds70V
Drain Source On State Resistance6000µohm
Transistor Case StyleISOTOP
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor MountingModule
Power Dissipation520W
Operating Temperature Max150°C
No. of Pins3Pins
Product Range-
產品總覽
The IXFN200N07 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- MiniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped inductive switching (UIS) rating
- Low package inductance
- Easy to mount
- Space saving
應用
Power Management, Lighting
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
70V
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
4V
Power Dissipation
520W
No. of Pins
3Pins
Continuous Drain Current Id
200A
Drain Source On State Resistance
6000µohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Operating Temperature Max
150°C
Product Range
-
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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產品合規憑證
重量 (公斤)：.044