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LND150K1-G
Power MOSFET, N Channel, 500 V, 13 mA, 1000 ohm, TO-236AB, Surface Mount
圖片僅供舉例說明。 請參閱產品描述。
1,495 有存貨
6,000 即日起您可預購補貨
1495 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$16.040 |
| 25+ | NT$13.480 |
| 100+ | NT$13.140 |
| 3000+ | NT$12.800 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商MICROCHIP
製造商產品編號LND150K1-G
訂購代碼
複捲式2450520RL
條帶式包裝2450520
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id13mA
Drain Source On State Resistance1000ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max-
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
The LND150K1-G is a N-channel depletion-mode DMOS FET utilizing Supertex's lateral DMOS technology. The gate is ESD protected. It is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and low CISS
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
13mA
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
0V
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
1000ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000006