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GD50HFU120C1SD
IGBT Module, Half Bridge, 82 A, 2.9 V, 440 W, 125 °C, Module
1,572 有存貨
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1572 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$1,275.350 |
| 5+ | NT$1,188.350 |
| 10+ | NT$1,096.330 |
| 50+ | NT$1,035.800 |
| 100+ | NT$1,014.520 |
價格Each
最少: 1
多項: 1
NT$1,275.35
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商STARPOWER
製造商產品編號GD50HFU120C1SD
訂購代碼4312702
技術資料表
IGBT ConfigurationHalf Bridge
Continuous Collector Current82A
Collector Emitter Saturation Voltage2.9V
Power Dissipation440W
Operating Temperature Max125°C
Transistor Case StyleModule
IGBT TerminationScrew
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT Ultra Fast IGBT
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
產品總覽
GD50HFU120C1SD is an IGBT power module that provides ultra switching speed as well as short circuit ruggedness. It is designed for the applications such as electronic welder, switching mode power supply and inductive heating.
- 1200V/50A 2 in one-package
- NPT IGBT technology
- 10μs short circuit capability
- Low switching losses
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
技術規格
IGBT Configuration
Half Bridge
Collector Emitter Saturation Voltage
2.9V
Operating Temperature Max
125°C
IGBT Termination
Screw
IGBT Technology
NPT Ultra Fast IGBT
Product Range
-
Continuous Collector Current
82A
Power Dissipation
440W
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:To Be Advised
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536