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IRG4PH40KPBF
IGBT, 1200V, 30A, TO-247AC
不再生產
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The IRG4PH40KPBF is a 1200V short-circuit rated Discrete (Insulated Gate Bipolar Transistor) IGBT provides tighter parameter distribution and higher efficiency than previous generations. It combines low induction losses with high switching speed. As a freewheeling diode, HEXFRED™ ultrafast, ultrasoft recovery diodes are recommended for minimum EMI/noise and switching losses in the diode and IGBT.
- High short circuit rating optimized for motor control (tsc=10µs, VCC=720V, TJ=125°C, VGE=15V)
- Latest generation 4 IGBT's offer highest power density motor controls possible
- Planar IGBT technology
- Ultrafast 8 to 30kHz switching speed
- ±20V Gate to emitter voltage
- 10µs Short-circuit withstand time
- 0.77°C/W IGBT thermal resistance, junction to case
應用
Power Management, Sensing & Instrumentation, Industrial
技術規格
Continuous Collector Current
30A
Power Dissipation
160W
No. of Pins
3Pins
Transistor Mounting
Through Hole
Collector Emitter Saturation Voltage
2.74V
Transistor Case Style
TO-247AC
Operating Temperature Max
150°C
Product Range
-
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Great Britain
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Great Britain
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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重量 (公斤)：.006