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IRG4PSH71UDPBF
IGBT, 99 A, 2.7 V, 350 W, 1.2 kV, TO-274AA, 3 Pins
不再生產
產品總覽
The IRG4PSH71UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The ultrafast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations.
- Creepage distance increased to 5.35mm
- High efficiency
- Maximum power density
- Optimized for specific application conditions
- HEXFRED™ anti-parallel diode minimizes switching losses and EMI
應用
Alternative Energy, Maintenance & Repair, Power Management
技術規格
Continuous Collector Current
99A
Power Dissipation
350W
No. of Pins
3Pins
Transistor Mounting
Through Hole
Collector Emitter Saturation Voltage
2.7V
Transistor Case Style
TO-274AA
Operating Temperature Max
150°C
Product Range
-
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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重量 (公斤)：.008038