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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
=283W
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MOSFET Module Configuration
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Drain Source On State Resistance
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No. of Pins
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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包裝
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| 比較 | 製造商產品編號 | 訂購編號 | 製造商 / 描述 | 庫存量 | 項目價格 | 價格 (含關稅，不含營業稅) | 數量 | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+NT$1,097.990 5+NT$988.190 10+NT$929.630 50+NT$863.750 100+NT$805.190 | Single | N Channel | 63A | 1.2kV | 0.032ohm | TO-247 | 3Pins | 15V | 2.5V | 283W | 175°C | C3M | ||||||
Each | 1+NT$1,056.300 5+NT$950.670 10+NT$894.340 50+NT$830.960 100+NT$774.620 | Single | N Channel | 63A | 1.2kV | 0.032ohm | TO-247 | 4Pins | 15V | 2.5V | 283W | 175°C | C3M | ||||||
