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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
=427W
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MOSFET Module Configuration
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Drain Source On State Resistance
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Transistor Case Style
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No. of Pins
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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| 比較 | 製造商產品編號 | 訂購編號 | 製造商 / 描述 | 庫存量 | 項目價格 | 價格 (含關稅，不含營業稅) | 數量 | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+NT$4,249.350 5+NT$3,916.790 10+NT$3,584.230 50+NT$3,512.550 | Single | N Channel | 95A | 1.2kV | 0.022ohm | TO-247N | 3Pins | 18V | 5.6V | 427W | 175°C | ||||||
Each | 1+NT$2,874.500 5+NT$2,808.220 10+NT$2,741.930 50+NT$2,412.770 | Single | N Channel | 118A | 650V | 0.017ohm | TO-247N | 3Pins | 18V | 5.6V | 427W | 175°C | ||||||
