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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
=869W
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MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Drain Source On State Resistance
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Transistor Case Style
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No. of Pins
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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| 比較 | 製造商產品編號 | 訂購編號 | 製造商 / 描述 | 庫存量 | 項目價格 | 價格 (含關稅，不含營業稅) | 數量 | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMICROELECTRONICS | Each | 1+NT$52,003.620 | SixPack | N Channel | 488A | 1.2kV | 2600µohm | ACEPACK DRIVE | 30Pins | 18V | 4.4V | 869W | 175°C | |||||
STMICROELECTRONICS | Each | 1+NT$48,241.440 | SixPack | N Channel | 488A | 1.2kV | 2600µohm | ACEPACK DRIVE | 30Pins | 18V | 4.4V | 869W | 175°C | |||||
