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MT53E2G32D4DE-046 WT:A
DRAM, Mobile LPDDR4, 64 Gbit, 2G x 32bit, 2.133 GHz, TFBGA, 200 Pins
不再生產
產品訊息
製造商MICRON
製造商產品編號MT53E2G32D4DE-046 WT:A
訂購代碼3652199
DRAM TypeMobile LPDDR4
DRAM Density64Gbit
Memory Density64Gbit
DRAM Memory Configuration2G x 32bit
Memory Configuration2G x 32bit
Clock Frequency Max2.133GHz
Clock Frequency2.133GHz
Memory Case StyleTFBGA
IC Case / PackageTFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
Access Time-
IC MountingSurface Mount
Operating Temperature Min-25°C
Operating Temperature Max85°C
Product Range-
SVHCNo SVHC (17-Dec-2015)
MT53E2G32D4DE-046 WT:A 的替代選擇
找到 1 個產品
產品總覽
MT53E2G32D4DE-046 WT:A is a mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device.
- 2 Gig x 32 configuration and 64Gbit DRAM density
- 1.10V VDD2/0.60V or 1.10V VDDQ operating voltage
- LPDDR4 4 die count
- 468ps tCK RL = 36/40 cycle time
- 2.133GHz clock frequency
- 200-ball TFBGA 10 x 14.5 x1.14mm (Ø0.40 SMD) package
- Operating temperature range from -25°C to +85°C
技術規格
DRAM Type
Mobile LPDDR4
Memory Density
64Gbit
Memory Configuration
2G x 32bit
Clock Frequency
2.133GHz
IC Case / Package
TFBGA
Supply Voltage Nom
1.1V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
SVHC
No SVHC (17-Dec-2015)
DRAM Density
64Gbit
DRAM Memory Configuration
2G x 32bit
Clock Frequency Max
2.133GHz
Memory Case Style
TFBGA
No. of Pins
200Pins
Access Time
-
Operating Temperature Min
-25°C
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Singapore
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Singapore
承擔產品生產最後程序之國家
關稅編號：85423239
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Dec-2015)
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產品合規憑證
重量 (公斤)：.00153