CY7C1069G30-10ZSXI

CY7C1069G30-10ZSXI is a 16Mbit (2M words × 8 bit) dual chip enable high-performance CMOS fast static RAM with error-correcting code (ECC). To write to the device, take chip enables (active-low CE1 LOW and active-low CE2 HIGH) and write enable (active-low WE) input LOW. To read from the device, take chip enables (active-low CE1 LOW and active-low CE2 HIGH) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. All I/Os (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (active-low CE1 HIGH or active-low CE2 LOW), and control signals are de-asserted (active-low CE1 / active-low CE2, active-low OE, active-low WE).

• Embedded error-correcting code (ECC) for single-bit error correction
• Low active current ICC is 90mA typical at 100MHz
• Low standby current ISB2 is 20mA typical
• 1.0V data retention
• Transistor-transistor logic (TTL) compatible inputs and outputs
• ERR pin to indicate 1-bit error detection and correction
• 2.2V to 3.6V voltage range
• High speed, tAA=10ns
• 54-pin TSOP II package
• Industrial ambient temperature range from -40°C to +85°C