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| 數量 | 價格 |
|---|---|
| 1+ | NT$618.990 |
| 10+ | NT$574.070 |
| 25+ | NT$556.190 |
| 50+ | NT$543.010 |
| 100+ | NT$529.500 |
產品訊息
產品總覽
The CY62167EV30LL-45BVXI is a 16Mb high performance CMOS static RAM organized as 1M words by 16-bits or 2M words by 8-bits. This device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected. The input and output pins are placed in a high impedance state when the device is deselected, outputs are disabled, both byte high enable and byte low enable are disabled or a write operation is in progress. To write to the device, take chip enables and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins.
- Ultra-low standby power
- Ultra-low active power
- Easy memory expansion with CE1, CE2 and OE
- Automatic power-down when deselected
- CMOS for optimum speed/power
應用
Computers & Computer Peripherals, Consumer Electronics
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Asynchronous SRAM
1M x 16bit
48Pins
3.6V
-
-40°C
-
No SVHC (25-Jun-2025)
16Mbit
FBGA
2.2V
3V
Surface Mount
85°C
-
CY62167EV30LL-45BVXI.. 的替代選擇
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法規與環境保護
承擔產品生產最後程序之國家原產地:United States
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
