FM24C04B-GTR

FM24C04B-GTR is a 4Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. Unlike EEPROM, the FM24C04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits.

• 4Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8
• 151-year data retention, No Delay™ writes
• Advanced high-reliability ferroelectric process
• Up to 1MHz frequency, direct hardware replacement for serial (I²C) EEPROM
• VDD voltage range from 4.5V to 5.5V, AEC-Q100 grade 3 qualified
• Standby current is 4µA typ at (SCL = SDA = VDD. All other inputs VSS or VDD. stop command issued)
• Output leakage current is +1µA maximum at (VSS < VIN < VDD)
• Input resistance is 40Kohm minimum at (for VIN = VIL (max))
• Input pin capacitance is 6pF max at (TA = 25°C, f = 1MHz, VDD = VDD(typ))
• Industrial ambient temperature range from -40°C to +85°C, 8-pin SOIC package