FM24V10-GTR

FM24V10-GTR is a 1Mbit (128K × 8) serial (I²C) F-RAM. It is a 1Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. Unlike EEPROM, the FM24V10 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling.

• 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8
• High-endurance 100 trillion (1014) read/writes
• 151-year data retention, noDelay™ writes
• Advanced high-reliability ferroelectric process
• Up to 3.4-MHz frequency, direct hardware replacement for serial (I2C) EEPROM
• Supports legacy timings for 100KHz and 400KHz
• Device ID and serial number, manufacturer ID and product ID
• 175µA active current at 100KHz, 90µA (typ) standby current
• Low-voltage operation range from VDD = 2.0V to 3.6V
• 8-pin SOIC package, ambient temperature range from -40 to +85°C