S70GL02GS12FHIV10

S70GL02GS12FHIV10 is a GL-T MIRRORBIT™ flash memory device is fabricated on 65-nm MIRRORBIT™ process technology. This device offers a fast page access time of 25ns with a corresponding random access time of 110ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption.

• Single supply (VCC) for read / program / erase (2.7V to 3.6V)
• 16-word/32-byte page read buffer
• Programming in page multiples, up to a maximum of 512 bytes
• Uniform 128-KB sectors, two thousand forty-eight sectors
• Suspend and resume commands for program and erase operations
• Status register, data polling, and ready/busy pin methods to determine device status
• Volatile and non-volatile protection methods for each sector
• Separate 1024byte one time program (OTP) array with two lockable regions
• 100,000 erase cycles per sector typical, 20-year data retention typical
• 64pin FBGA, industrial temperature range from -40°C to +85°C