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DMC2038LVT-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 2.6 A, 0.035 ohm
產品訊息
製造商DIODES INC.
製造商產品編號DMC2038LVT-7
訂購代碼3127305RL
技術資料表
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id3.7A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.027ohm
Continuous Drain Current Id N Channel3.7A
Continuous Drain Current Id P Channel2.6A
Drain Source On State Resistance N Channel0.035ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.074ohm
Gate Source Threshold Voltage Max1V
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation Pd800mW
Power Dissipation N Channel800mW
Power Dissipation P Channel800mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
產品總覽
DMC2038LVT-7 is a complementary pair enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include motor control, power management functions, DC-DC converters, and backlighting.
- Low on-resistance, low input capacitance
- Fast switching speed, low input/output leakage
- 20V drain source voltage (P channel/N channel)
- 3.7A continuous drain current (P channel/N channel)
- 0.027ohm drain source on state resistance (P channel/N channel)
- 800mW power dissipation (P channel/N channel)
- TSOT26 case
- Operating and storage temperature range from -55 to +150°C
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
3.7A
On Resistance Rds(on)
0.027ohm
Continuous Drain Current Id P Channel
2.6A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.074ohm
Transistor Case Style
TSOT-26
Power Dissipation Pd
800mW
Power Dissipation P Channel
800mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
3.7A
Drain Source On State Resistance N Channel
0.035ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Power Dissipation N Channel
800mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536