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DMC3028LSD
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 5.5 A, 5.5 A, 0.028 ohm
產品訊息
製造商DIODES INC.
製造商產品編號DMC3028LSD
訂購代碼2061402RL
技術資料表
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id5.5A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.028ohm
Continuous Drain Current Id N Channel5.5A
Continuous Drain Current Id P Channel5.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.028ohm
Drain Source On State Resistance P Channel0.028ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
Power Dissipation Pd1.3W
Power Dissipation N Channel1.3W
Power Dissipation P Channel1.3W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The DMC3028LSD is a 30V Complementary Dual Enhancement Mode MOSFET with matte tin annealed over copper lead frame terminals solderable as per MIL-STD-202 standard, method 208. it is ideal for high efficiency power management applications such as DC-DC converters and backlighting.
- Low on-resistance
- Fast switching speed
- UL94V-0 Flammability rating
應用
Motor Drive & Control, Power Management, Aerospace, Defence, Military
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
5.5A
On Resistance Rds(on)
0.028ohm
Continuous Drain Current Id P Channel
5.5A
Drain Source On State Resistance N Channel
0.028ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.3W
Power Dissipation P Channel
1.3W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
5.5A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.028ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.3W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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重量 (公斤)：.000227