列印頁面
DMC4029SSD-13
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 7 A, 7 A, 0.024 ohm
產品訊息
製造商DIODES INC.
製造商產品編號DMC4029SSD-13
訂購代碼3944055RL
技術資料表
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id7A
Drain Source Voltage Vds P Channel40V
On Resistance Rds(on)0.015ohm
Continuous Drain Current Id N Channel7A
Continuous Drain Current Id P Channel7A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.024ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.045ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
No. of Pins8Pins
Power Dissipation Pd1.8W
Power Dissipation N Channel1.8W
Power Dissipation P Channel1.8W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
40V
Continuous Drain Current Id
7A
On Resistance Rds(on)
0.015ohm
Continuous Drain Current Id P Channel
7A
Drain Source On State Resistance N Channel
0.024ohm
Drain Source On State Resistance P Channel
0.045ohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
1.8W
Power Dissipation P Channel
1.8W
Product Range
-
Automotive Qualification Standard
-
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
7A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001