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DMG1012T-7
MOSFET, N CH, 20V, SOT-523
1,451,213 有存貨
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384490 件可于 1-2 個工作日後配送(新加坡 件庫存)
1066723 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$6.080 |
| 50+ | NT$6.020 |
| 100+ | NT$5.960 |
| 500+ | NT$3.120 |
| 1500+ | NT$3.060 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$30.40
品項附註
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產品訊息
製造商DIODES INC.
製造商產品編號DMG1012T-7
訂購代碼2543524
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id630mA
Drain Source On State Resistance0.4ohm
Transistor Case StyleSOT-523
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation280mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
DMG1012T-7 is a N-channel enhancement mode MOSFET.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage, ESD protected up to 2kV
- Drain-source voltage is 20V at TA = +25°C
- Gate-source voltage is ±6V at TA = +25°C
- Continuous drain current is 0.63A at TA = +25°C, steady state
- Pulsed drain current is 3A at TA = +25°C
- Total power dissipation is 0.28W at TA = +25°C
- SOT523 package
- Operating and storage temperature range from -55 to +150°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
630mA
Transistor Case Style
SOT-523
Rds(on) Test Voltage
4.5V
Power Dissipation
280mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
技術文件 (1)
DMG1012T-7 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000053