列印頁面
DMG1012UW-7
Power MOSFET, N Channel, 20 V, 1 A, 0.45 ohm, SOT-323, Surface Mount
產品訊息
製造商DIODES INC.
製造商產品編號DMG1012UW-7
訂購代碼3127309
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1A
Drain Source On State Resistance0.45ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation290mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
DMG1012UW-7 is a N-channel enhancement mode MOSFET.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage, ESD protected up to 2kV
- Drain-source voltage is 20V at TA = +25°C
- Gate-source voltage is ±6V at TA = +25°C
- Continuous drain current is 1A at TA = +25°C, steady state
- Pulsed drain current is 6A at TA = +25°C
- Total power dissipation is 0.29W at TA = +25°C
- SOT323 case
- Operating and storage temperature range from -55 to +150°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
1A
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4.5V
Power Dissipation
290mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.45ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
DMG1012UW-7 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000053