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DMG1013T-7
Power MOSFET, P Channel, 20 V, 460 mA, 0.7 ohm, SOT-523, Surface Mount
90,453 有存貨
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90453 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$1.430 |
| 500+ | NT$1.310 |
| 1500+ | NT$1.300 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$143.00
品項附註
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產品訊息
製造商DIODES INC.
製造商產品編號DMG1013T-7
訂購代碼2543525RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id460mA
Drain Source On State Resistance0.7ohm
Transistor Case StyleSOT-523
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation270mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Suitable for DC/DC converters, load switch and power management function
- Low On-Resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input / output leakage
技術規格
Channel Type
P Channel
Continuous Drain Current Id
460mA
Transistor Case Style
SOT-523
Rds(on) Test Voltage
4.5V
Power Dissipation
270mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.7ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005