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DMG3414U
Power MOSFET, Enhancement Mode, N Channel, 20 V, 4.2 A, 0.025 ohm, SOT-23, Surface Mount
產品訊息
製造商DIODES INC.
製造商產品編號DMG3414U
訂購代碼2061404
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.2A
Drain Source On State Resistance0.025ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max500mV
Power Dissipation780mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The DMG3414U is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard.
- Low ON-resistance
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Halogen-free, Green device
- Qualified to AEC-Q101 standards for high reliability
- Moisture sensitivity level 1 as per J-STD-020
- UL94V-0 Flammability rating
應用
Power Management, Automotive, Aerospace, Defence, Military
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
780mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
500mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
DMG3414U 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.004264