列印頁面
DMG4822SSD-13
Dual MOSFET, N Channel, 30 V, 30 V, 10 A, 10 A, 0.021 ohm
產品訊息
製造商DIODES INC.
製造商產品編號DMG4822SSD-13
訂購代碼3944065RL
技術資料表
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id10A
Continuous Drain Current Id N Channel10A
On Resistance Rds(on)0.0134ohm
Continuous Drain Current Id P Channel10A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.021ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation Pd1.42W
No. of Pins8Pins
Power Dissipation N Channel1.42W
Power Dissipation P Channel1.42W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
10A
Continuous Drain Current Id P Channel
10A
Drain Source On State Resistance N Channel
0.021ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
1.42W
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
10A
On Resistance Rds(on)
0.0134ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
1.42W
Power Dissipation N Channel
1.42W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001