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DMG6601LVT-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.8 A, 3.8 A, 0.034 ohm
產品訊息
製造商DIODES INC.
製造商產品編號DMG6601LVT-7
訂購代碼2543535
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.8A
Continuous Drain Current Id P Channel3.8A
Drain Source On State Resistance N Channel0.034ohm
Drain Source On State Resistance P Channel0.034ohm
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation N Channel850mW
Power Dissipation P Channel850mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
產品總覽
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Complementary MOSFET
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.8A
Drain Source On State Resistance P Channel
0.034ohm
No. of Pins
6Pins
Power Dissipation P Channel
850mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.8A
Drain Source On State Resistance N Channel
0.034ohm
Transistor Case Style
TSOT-26
Power Dissipation N Channel
850mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.005