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DMG6898LSD-13
Dual MOSFET, N Channel, 20 V, 20 V, 9.5 A, 9.5 A, 0.016 ohm
1,865 有存貨
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1865 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$32.500 |
| 10+ | NT$20.230 |
| 100+ | NT$13.200 |
| 500+ | NT$10.190 |
| 1000+ | NT$9.170 |
| 5000+ | NT$8.880 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$32.50
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商DIODES INC.
製造商產品編號DMG6898LSD-13
訂購代碼3944068
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel9.5A
Continuous Drain Current Id P Channel9.5A
Drain Source On State Resistance N Channel0.016ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.28W
Power Dissipation P Channel1.28W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
9.5A
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
1.28W
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
9.5A
Drain Source On State Resistance N Channel
0.016ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.28W
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001