列印頁面
DMN2024UVTQ-7
Dual MOSFET, N Channel, 20 V, 20 V, 7 A, 7 A, 0.024 ohm
產品訊息
製造商DIODES INC.
製造商產品編號DMN2024UVTQ-7
訂購代碼3828404RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id7A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.019ohm
Continuous Drain Current Id N Channel7A
Continuous Drain Current Id P Channel7A
Drain Source On State Resistance N Channel0.024ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage4.5V
Transistor Case StyleTSOT-26
Gate Source Threshold Voltage Max900mV
Power Dissipation Pd1.6W
No. of Pins6Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.6W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
7A
On Resistance Rds(on)
0.019ohm
Continuous Drain Current Id P Channel
7A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
900mV
No. of Pins
6Pins
Power Dissipation P Channel
1.6W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
7A
Drain Source On State Resistance N Channel
0.024ohm
Drain Source On State Resistance P Channel
-
Transistor Case Style
TSOT-26
Power Dissipation Pd
1.6W
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0001