列印頁面
DMN2050LFDB-7
Dual MOSFET, N Channel, 20 V, 20 V, 4.5 A, 4.5 A, 0.045 ohm
產品訊息
製造商DIODES INC.
製造商產品編號DMN2050LFDB-7
訂購代碼3944096RL
技術資料表
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id4.5A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.028ohm
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.045ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage4.5V
Transistor Case StyleUDFN2020
Gate Source Threshold Voltage Max1V
Power Dissipation Pd1.42W
No. of Pins6Pins
Power Dissipation N Channel1.42W
Power Dissipation P Channel1.42W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
4.5A
On Resistance Rds(on)
0.028ohm
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance N Channel
0.045ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Power Dissipation P Channel
1.42W
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
4.5A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
UDFN2020
Power Dissipation Pd
1.42W
Power Dissipation N Channel
1.42W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001