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| 數量 | 價格 |
|---|---|
| 50+ | NT$13.430 |
| 250+ | NT$9.240 |
| 1000+ | NT$7.710 |
| 2000+ | NT$6.780 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$1,343.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商DIODES INC.
製造商產品編號DMN6068SE
訂購代碼2061415RL
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id5.6A
Drain Source On State Resistance0.068ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation16W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The DMN6068SE is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low ON-resistance
- 100% Unclamped inductive switch (UIS) test in production
- Fast switching speed
- Halogen-free, Green device
- Moisture sensitivity level 1 as per J-STD-020
- UL94V-0 Flammability rating
應用
Power Management, Aerospace, Defence, Military, Motor Drive & Control
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5.6A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
16W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.068ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
相關產品
找到 2 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.001588