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DMP2022LSS-13
Power MOSFET, P Channel, 20 V, 1 A, 0.013 ohm, SOIC, Surface Mount
846 有存貨
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515 件可于 1-2 個工作日後配送(新加坡 件庫存)
331 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$22.490 |
| 50+ | NT$18.250 |
| 100+ | NT$14.010 |
| 500+ | NT$11.370 |
| 1000+ | NT$10.170 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$112.45
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產品訊息
製造商DIODES INC.
製造商產品編號DMP2022LSS-13
訂購代碼2543549
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1A
Drain Source On State Resistance0.013ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max770mV
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
DMP2022LSS-13 is a single P-channel enhancement mode MOSFET.
- Low gate threshold voltage, low input capacitance
- Fast switching speed, low input/output leakage
- Drain-source voltage is -20V at TA = +25°C
- Gate-source voltage is ±12V at TA = +25°C
- Drain current is -10A at TA = +25°C, steady state, TA = +25°C
- Pulsed drain current is -90A at TA = +25°C
- Total power dissipation is 2.5W
- Static drain-source on-resistance is 13mohm max at VGS = -10V, ID = -10A, TA = +25°C
- SO-8 case
- Operating and storage temperature range from -55 to +150°C
技術規格
Channel Type
P Channel
Continuous Drain Current Id
1A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.013ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
770mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
DMP2022LSS-13 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000207