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DMP2035U
Power MOSFET, Enhancement Mode, P Channel, 20 V, 3.6 A, 0.035 ohm, SOT-23, Surface Mount
產品訊息
製造商DIODES INC.
製造商產品編號DMP2035U
訂購代碼2061419RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.6A
Drain Source On State Resistance0.035ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max700mV
Power Dissipation810mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
DMP2035U is a P-channel enhancement mode MOSFET.
- Low input capacitance, low on-resistance
- Fast switching speed, low input/output leakage, ESD protected
- Drain-source voltage is -20V at TA=+25°C
- Gate-source voltage is ±10V at TA=+25°C
- Continuous drain current is -4.9A at TA=+25°C, VGS = -4.5V, steady state
- Pulsed drain current is -24A at TA = +25°C
- Maximum continuous body diode forward current is -1.2A at TA = +25°C
- Static drain-source on-resistance is 35mohm max at VGS = -4.5V, ID = -4.0A, TA = +25°C
- SOT23 package
- Operating and storage temperature range from -55 to +150°C
技術規格
Channel Type
P Channel
Continuous Drain Current Id
3.6A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
810mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.035ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
700mV
No. of Pins
3Pins
Product Range
-
MSL
-
技術文件 (1)
DMP2035U 的替代選擇
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原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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重量 (公斤)：.040794