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產品訊息
製造商DIODES INC.
製造商產品編號DMP3013SFV-7
訂購代碼3405192
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12A
Drain Source On State Resistance9500µohm
Transistor Case StylePowerDI3333
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation940mW
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
DMP3013SFV-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include backlighting, power management functions, DC-DC converters.
- Low RDS(ON) – ensures on state losses are minimized
- Small form factor thermally efficient package enables higher density end products
- Drain-source voltage is -30V at TA = +25°C
- Gate-source voltage is ±25V at TA = +25°C
- Continuous drain current is -12A at TA = +25°C, VGS = -10V, steady state
- Pulsed drain current (380µs pulse, duty cycle = 1%) is -80A at TA = +25°C
- Total power dissipation is 0.94W at TA = +25°C
- Static drain-source on-resistance is 9.5mohm max at VGS = -10V, ID = -11.5A, TA = +25°C
- PowerDI3333-8 (type UX) case
- Operating and storage temperature range from -55 to +150°C
技術規格
Channel Type
P Channel
Continuous Drain Current Id
12A
Transistor Case Style
PowerDI3333
Rds(on) Test Voltage
10V
Power Dissipation
940mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
9500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.004536