列印頁面
DMP3056LSD-13
Dual MOSFET, P Channel, 30 V, 30 V, 6.9 A, 6.9 A
產品訊息
製造商DIODES INC.
製造商產品編號DMP3056LSD-13
訂購代碼3944148RL
技術資料表
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id6.9A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.045ohm
Continuous Drain Current Id N Channel6.9A
Continuous Drain Current Id P Channel6.9A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.045ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.7V
No. of Pins8Pins
Power Dissipation Pd2.5W
Power Dissipation N Channel2.5W
Power Dissipation P Channel2.5W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
6.9A
On Resistance Rds(on)
0.045ohm
Continuous Drain Current Id P Channel
6.9A
Drain Source On State Resistance N Channel
-
Drain Source On State Resistance P Channel
0.045ohm
Gate Source Threshold Voltage Max
1.7V
Power Dissipation Pd
2.5W
Power Dissipation P Channel
2.5W
Product Range
-
Automotive Qualification Standard
-
Channel Type
P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
6.9A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001