列印頁面
DMT3009LDT-7
Dual MOSFET, N Channel, 30 V, 30 V, 30 A, 30 A, 0.0111 ohm
產品訊息
製造商DIODES INC.
製造商產品編號DMT3009LDT-7
訂購代碼3944161RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id30A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.0072ohm
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0111ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleV-DFN3030
Gate Source Threshold Voltage Max3V
No. of Pins8Pins
Power Dissipation Pd2W
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.0072ohm
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance N Channel
0.0111ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
2W
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
30A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
V-DFN3030
No. of Pins
8Pins
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001