列印頁面
DMT3020UFDB-7
Dual MOSFET, N Channel, 30 V, 30 V, 6.5 A, 6.5 A, 0.021 ohm
產品訊息
製造商DIODES INC.
製造商產品編號DMT3020UFDB-7
訂購代碼3828437RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id6.5A
On Resistance Rds(on)0.019ohm
Continuous Drain Current Id N Channel6.5A
Continuous Drain Current Id P Channel6.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.021ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Transistor Case StyleU-DFN2020
Gate Source Threshold Voltage Max1.7V
Power Dissipation Pd1.3W
No. of Pins6Pins
Power Dissipation N Channel1.3W
Power Dissipation P Channel1.3W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.019ohm
Continuous Drain Current Id P Channel
6.5A
Drain Source On State Resistance N Channel
0.021ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
No. of Pins
6Pins
Power Dissipation P Channel
1.3W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
6.5A
Continuous Drain Current Id N Channel
6.5A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
U-DFN2020
Power Dissipation Pd
1.3W
Power Dissipation N Channel
1.3W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0001