列印頁面
DST847BPDP6-7
Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 45 V, 100 mA, 100 mA, 300 mW
產品訊息
製造商DIODES INC.
製造商產品編號DST847BPDP6-7
訂購代碼3944331RL
技術資料表
Transistor PolarityComplementary NPN and PNP
Collector Emitter Voltage V(br)ceo45V
Collector Emitter Voltage Max NPN45V
DC Collector Current100mA
Collector Emitter Voltage Max PNP45V
Continuous Collector Current NPN100mA
Power Dissipation Pd300mW
DC Current Gain hFE200hFE
Continuous Collector Current PNP100mA
Power Dissipation NPN300mW
Power Dissipation PNP300mW
DC Current Gain hFE Min NPN200hFE
DC Current Gain hFE Min PNP200hFE
Transistor Case StyleSOT-963
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN175MHz
Transition Frequency PNP340MHz
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
技術規格
Transistor Polarity
Complementary NPN and PNP
Collector Emitter Voltage Max NPN
45V
Collector Emitter Voltage Max PNP
45V
Power Dissipation Pd
300mW
Continuous Collector Current PNP
100mA
Power Dissipation PNP
300mW
DC Current Gain hFE Min PNP
200hFE
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
340MHz
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage V(br)ceo
45V
DC Collector Current
100mA
Continuous Collector Current NPN
100mA
DC Current Gain hFE
200hFE
Power Dissipation NPN
300mW
DC Current Gain hFE Min NPN
200hFE
Transistor Case Style
SOT-963
Transistor Mounting
Surface Mount
Transition Frequency NPN
175MHz
Product Range
-
Automotive Qualification Standard
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001