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ZVN2110A
Power MOSFET, N Channel, 100 V, 320 mA, 4 ohm, TO-226AA, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$11.750 |
| 10+ | NT$11.390 |
| 100+ | NT$9.250 |
| 500+ | NT$9.240 |
價格Each
最少: 1
多項: 1
NT$11.75
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產品訊息
製造商DIODES INC.
製造商產品編號ZVN2110A
訂購代碼9525440
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id320mA
Drain Source On State Resistance4ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation700mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
產品總覽
ZVN2110A is a N-channel enhancement mode vertical DMOS FET.
- Drain-source voltage is 100V
- Continuous drain current at Tamb=25° is 320mA
- Pulsed drain current is 6A
- Gate source voltage is ±20V
- Power dissipation at Tamb=25°C is 700mW
- Drain-source breakdown voltage is 100V min at ID=1mA, VGS=0V, Tamb=25°C
- Static drain-source on-state resistance is 4ohm max at VGS=10V, ID=1A, Tamb=25°C
- Turn-off delay time is 13ns max at VDD ≈25V, ID=1A, Tamb=25°C
- E-Line package
- Operating and storage temperature range from -55 to +150°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
320mA
Transistor Case Style
TO-226AA
Rds(on) Test Voltage
10V
Power Dissipation
700mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
4ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000166