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數量 | 價格 |
---|---|
1+ | NT$50.560 |
10+ | NT$36.710 |
100+ | NT$27.930 |
500+ | NT$26.410 |
1000+ | NT$24.890 |
5000+ | NT$23.800 |
價格Each
最少: 1
多項: 1
NT$50.56
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產品訊息
製造商DIODES INC.
製造商產品編號ZVN4306A
訂購代碼9524924
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.1A
Drain Source On State Resistance0.33ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation850mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
產品總覽
ZVN4306A is a N-channel enhancement mode vertical DMOS FET. It is ideal for DC – DC converters.
- Drain-source voltage is 60V at TA = 25°C
- Gate-source voltage is ±20V at TA = 25°C
- Continuous drain current is 1.1A at TA = 25°C
- Practical continuous drain current is 1.3A at TA = 25°C
- Pulsed drain current is 15A at TA = +25°C
- Power dissipation is 850mW at TA = 25°C
- Drain-source breakdown voltage is 60V min at VGS = 0V, ID = 1mA, TA = 25°C
- Static drain-source on-state resistance is 0.33ohm max at VGS = 10V, ID = 3A, TA = 25°C
- E-line package
- Operating and storage temperature range from -55 to +150°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
1.1A
Transistor Case Style
TO-226AA
Rds(on) Test Voltage
10V
Power Dissipation
850mW
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.33ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000163