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ZVP3306A
Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole
1,971 有存貨
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1971 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$32.520 |
| 10+ | NT$24.150 |
| 100+ | NT$11.340 |
| 500+ | NT$11.030 |
| 1000+ | NT$10.710 |
| 5000+ | NT$10.390 |
價格Each
最少: 1
多項: 1
NT$32.52
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商DIODES INC.
製造商產品編號ZVP3306A
訂購代碼9524851
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id160mA
Drain Source On State Resistance14ohm
Transistor Case StyleE-Line
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation625mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
ZVP3306A is a P-channel enhancement mode vertical DMOS FET.
- Drain-source voltage is -60V
- Continuous drain current at Tamb=25°C is -160mA
- Pulsed drain current is -1.6A
- Gate-source voltage is ±20V
- Power dissipation at Tamb=25°C is 625mW
- Drain-source breakdown voltage is -60V min at ID=-1mA, VGS=0V, Tamb = 25°C
- Static drain-source on-state resistance is 14ohm max at VGS=-10V, ID=-200mA, Tamb = 25°C
- Gate-source threshold voltage is -3.5V max at ID=-1mA, VDS= VGS, Tamb = 25°C
- E-line package
- Operating and storage temperature range from -55 to +150°C
技術規格
Channel Type
P Channel
Continuous Drain Current Id
160mA
Transistor Case Style
E-Line
Rds(on) Test Voltage
10V
Power Dissipation
625mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
14ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000165