4,231 即日起您可預購補貨
| 數量 | 價格 |
|---|---|
| 1+ | NT$21.440 |
| 10+ | NT$13.710 |
| 100+ | NT$11.220 |
| 500+ | NT$10.720 |
| 1000+ | NT$10.570 |
| 2500+ | NT$10.420 |
| 5000+ | NT$10.390 |
產品訊息
產品總覽
The ZXGD3002E6TA is a Non-inverting Single MOSFET Gate Driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 20V. With typical propagation delay times down to 2ns and rise/fall times down to 11ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. The ZXGD3002E6 is inherently rugged to latch-up and shoot-through and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs enables reduced parasitic inductance and independent control of rise and fall slew rates.
- Fast switching emitter-follower configuration
- 2ns Propagation delay time
- 11ns Rise/fall time, 1000pF load
- Low input current requirement
- Separate source and sink outputs for independent control of rise and fall time
- Optimized pin-out to ease board layout and minimize trace inductance
- No latch-up
- No shoot through
- Near zero quiescent and output leakage current
應用
Signal Processing, Audio
警告
ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
1Channels
Low Side
6Pins
Surface Mount
9A
0V
-55°C
1.25ns
-
-
-
MOSFET
SOT-23
Non-Inverting
9A
20V
150°C
1.6ns
-
No SVHC (25-Jun-2025)
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法規與環境保護
承擔產品生產最後程序之國家原產地:Great Britain
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證