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ZXMP6A18DN8TA
Power MOSFET, P Channel, 60 V, 3.7 A, 0.055 ohm, SOIC, Surface Mount
產品訊息
製造商DIODES INC.
製造商產品編號ZXMP6A18DN8TA
訂購代碼2061515
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id3.7A
Drain Source On State Resistance0.055ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation1.25W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The ZXMP6A18DN8TA is a P-channel enhancement-mode Dual MOSFET with moulded plastic case and solderable matte tin finish leads as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low ON-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- Low profile package
- Halogen-free, Green device
- UL94V-0 Flame-rated moulded plastic case
- Moisture sensitivity level 1 as per J-STD-020
應用
Power Management, Motor Drive & Control, Aerospace, Defence, Military
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
3.7A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.055ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000181