HMC416LP4E

HMC416LP4E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifier. The VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Typical application includes wireless Infrastructure, industrial controls, test equipment, military.

• No external resonator needed
• Frequency range from 2.75 to 3.0GHz (TA = +25°C, Vcc = +3V)
• Power output is 4.5dBm (typ, TA = +25°C, Vcc = +3V)
• SSB phase noise at 100KHz offset, Vtune= +5V at RF output is -114dBc/Hz (typ)
• Tune voltage (Vtune) range from 0 to 10V (TA = +25°C, Vcc = +3V)
• Supply current (Icc) (Vcc = +3.0V) is 37mA (typ, TA = +25°C, Vcc = +3V)
• Tune port leakage current is 10μA (max, TA = +25°C, Vcc = +3V)
• Output return loss is 9dB (typ, TA = +25°C, Vcc = +3V)
• Frequency drift rate is 0.3MHz/°C (typ, TA = +25°C, Vcc = +3V)
• 24 lead QFN-EP package, operating temperature range from -40 to +85°C

Notes

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