AFBR-S4N22P014M

AFBR-S4N22P014M is a single-channel silicon photomultiplier (SiPM) array that is used for ultrasensitive precision measurements of single photons. This SiPM is based on NUV-MT technology, which combines improved photo-detection efficiency (PDE) with decreased dark count rate and reduced crosstalk compared to the NUV-HD technology. The SPAD pitch is 40μm. Larger areas can be covered by tiling multiple AFBR-S4N22P014M SiPMs. The encapsulation for good mechanical stability and robustness is realized by an epoxy clear mould compound, which is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue and near-UV region of the light spectrum. It is used in applications such as X-ray and gamma-ray detection, nuclear medicine, positron emission tomography, safety and security, physics experiments, Cherenkov detection.

• High PDE (63% at 420nm), excellent SPTR and CRT
• 4-side tileable, with high fill factors
• Highly transparent epoxy protection layer
• Excellent uniformity of breakdown voltage and gain between devices
• Spectral range is 900nm maximum at (12V OV and 25°C)
• Breakdown voltage is 32.5V typical at (12V OV and 25°C)
• Photo-detection efficiency is 63% typical at (12V OV and 25°C)
• Temperature coefficient of breakdown voltage is 30mV/°C typical at (12V OV and 25°C)
• Dark current per element is 0.98µA typical at (12V OV and 25°C)
• Operating temperature range from -20°C to +60°C