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IPB50R140CPATMA1
Power MOSFET, N Channel, 550 V, 23 A, 0.13 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB50R140CPATMA1Copy
Manufacturer Standard Lead Time10 weeks
Order Code
Re-Reel2443387RL
Cut Tape2443387
Also Known AsIPB50R140CP, SP000212746
Your Part Number
350 In Stock
Need more?
350 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 1 | NT$177.530 | NT$177.53 |
| Total Price | NT$177.53 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | NT$177.530 |
| 10+ | NT$116.410 |
| 100+ | NT$86.660 |
| 500+ | NT$72.760 |
| 1000+ | NT$67.260 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB50R140CPATMA1Copy
Manufacturer Standard Lead Time10 weeks
Order Code
Re-Reel2443387RL
Cut Tape2443387
Also Known AsIPB50R140CP, SP000212746
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds550V
Continuous Drain Current Id23A
Drain Source On State Resistance0.13ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation192W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPB50R140CP is a CoolMOS™ N-channel Power MOSFET with ultra-low gate charge and high peak current capability. The CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.
- Lowest figure of merit Ron x Qg
- Extreme dV/dt rate
- Ultra low RDS (ON), very fast switching
- Very low internal Rg
- High peak current capability
- High power density and efficiency for superior power conversion systems
- Best-in-class performance ratio
- Qualified according to JEDEC for target applications
- Green device
Applications
Power Management, Communications & Networking, Consumer Electronics, Computers & Computer Peripherals, Alternative Energy
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
23A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
192W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
550V
Drain Source On State Resistance
0.13ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00181