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IRLL024NTRPBF
Power MOSFET, N Channel, 55 V, 3.1 A, 0.065 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRLL024NTRPBFCopy
Manufacturer Standard Lead Time18 weeks
Order Code
Re-Reel2468048RL
Cut Tape2468048
Also Known AsSP001568956
Your Part Number
26,284 In Stock
Need more?
26,284 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 5 | NT$26.120 | NT$130.60 |
| Total Price | NT$130.60 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | NT$26.120 |
| 50+ | NT$21.630 |
| 100+ | NT$17.140 |
| 500+ | NT$13.260 |
| 1000+ | NT$11.980 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLL024NTRPBFCopy
Manufacturer Standard Lead Time18 weeks
Order Code
Re-Reel2468048RL
Cut Tape2468048
Also Known AsSP001568956
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id3.1A
Drain Source On State Resistance0.065ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRLL024NTRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques.
- Advanced process technology
- Ultra-low ON-resistance
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
- Logic level
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.1A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001728