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| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 1 | NT$78.440 | NT$78.44 |
| Total Price | NT$78.44 | ||
| Quantity | Price |
|---|---|
| 1+ | NT$78.440 |
| 10+ | NT$53.540 |
| 50+ | NT$50.960 |
| 100+ | NT$48.370 |
| 250+ | NT$45.470 |
| 500+ | NT$44.500 |
| 1000+ | NT$40.940 |
| 2500+ | NT$40.470 |
Product Information
Product Overview
ISSI20R11HXUMA1 is a coreless-transformer advanced solid-state isolator that provides powerful energy transmission over a galvanic isolation barrier to drive the gates of MOS-controlled power transistors, such as CoolMOS™, OptiMOS™, TRENCHSTOP™ IGBT, or CoolSiC™. The output side of the iSSI solid-state isolator family does not require a dedicated voltage supply to drive the power transistor's gate. The output side offers advanced control functions such as fast turn-on, fast turn-off, overcurrent protection, and over-temperature protection to easily and safely build up solid-state relays for various applications. Potential applications include solid-state relay AC and DC applications, electro-mechanical relay replacements, programmable logic control, industrial automation, and controls, smart building and home automation systems (thermostat, lighting, heating control), and instrumentation equipment.
- Qualified for industrial applications according to relevant tests of JEDEC47/20/22
- Solid-state isolators using Infineon's coreless-transformer technology
- No isolated gate bias supply required for gate driving, OCP or OTP (PTC) protection
- Low power, large input voltage range from 2.6 V to 3.5 V (internally clamped)
- High-impedance, CMOS input (buffered variants), fast turn-on
- High output voltage up to 18V no series or parallel configuration required for powerful gate driving
- High output peak current of 185µA (direct drive variants) or 400mA (buffered variants)
- Fast turn-off for safe switch SOA operation, temperature sensor and current sensor protection inputs
- Latch-off in case of a failure event, dynamic Miller clamping protection
- PG-DSO-8-66 package, junction temperature range from -40 to 150°C
Technical Specifications
1Channels
3.5V
8Pins
CMOS
Solid State
5.7kVrms
125°C
-
2.85V
DSO
-
-
-
-40°C
-
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Indonesia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate
