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NVMFWS2D3N04XM
Power MOSFET, PPAP Capable, N Channel, 40 V, 121 A, 2350 µohm, WDFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVMFWS2D3N04XM
Order Code4472912RL
Your Part Number
Technical Datasheet
1,491 In Stock
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| Quantity | Price |
|---|---|
| 100+ | NT$25.900 |
| 500+ | NT$21.960 |
| 1000+ | NT$19.640 |
| 5000+ | NT$17.400 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
NT$2,590.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFWS2D3N04XM
Order Code4472912RL
Technical Datasheet
Drain Source Voltage Vds40V
Continuous Drain Current Id121A
Drain Source On State Resistance2350µohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation63W
No. of Pins5Pins
Operating Temperature Max175°C
Technical Specifications
Drain Source Voltage Vds
40V
Drain Source On State Resistance
2350µohm
Gate Source Threshold Voltage Max
3.5V
No. of Pins
5Pins
Continuous Drain Current Id
121A
Rds(on) Test Voltage
10V
Power Dissipation
63W
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001