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PD55025-E
RF FET Transistor, 40 V, 7 A, 79 W, 1 GHz, PowerSO-10RF
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| Quantity | Price |
|---|---|
| 1+ | NT$775.240 |
| 5+ | NT$735.580 |
| 10+ | NT$692.940 |
| 50+ | NT$657.120 |
| 100+ | NT$618.740 |
| 250+ | NT$593.150 |
Price for:Each
Minimum: 1
Multiple: 1
NT$775.24
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD55025-ECopy
Order Code5155508
Technical Datasheet
Drain Source Voltage Vds40V
Continuous Drain Current Id7A
Power Dissipation79W
Operating Frequency Min-
Operating Frequency Max1GHz
Transistor Case StylePowerSO-10RF
No. of Pins2Pins
Operating Temperature Max165°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Drain Source Voltage Vds
40V
Power Dissipation
79W
Operating Frequency Max
1GHz
No. of Pins
2Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
7A
Operating Frequency Min
-
Transistor Case Style
PowerSO-10RF
Operating Temperature Max
165°C
Transistor Mounting
Surface Mount
SVHC
No SVHC (04-Feb-2026)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001