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PD57018-E
RF FET Transistor, 65 V, 2.5 A, 31.7 W, 945 MHz, PowerSO-10RF
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Available to Order
Manufacturer Standard Lead Time: 7 week(s)
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| Quantity | Price |
|---|---|
| 1+ | NT$956.340 |
| 10+ | NT$881.970 |
| 25+ | NT$867.120 |
Price for:Each
Minimum: 1
Multiple: 1
NT$956.34
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD57018-E
Order Code2807339
Technical Datasheet
Drain Source Voltage Vds65V
Continuous Drain Current Id2.5A
Power Dissipation31.7W
Operating Frequency Min-
Transistor Case StylePowerSO-10RF
Operating Temperature Max165°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Technical Specifications
Drain Source Voltage Vds
65V
Power Dissipation
31.7W
Transistor Case Style
PowerSO-10RF
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
2.5A
Operating Frequency Min
-
Operating Temperature Max
165°C
Transistor Mounting
Surface Mount
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0023