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STB8NM60T4
Power MOSFET, N Channel, 650 V, 8 A, 0.9 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STB8NM60T4Copy |
| Manufacturer Standard Lead Time | 26 weeks |
| Order Code | Re-Reel2344089RL Cut Tape2344089 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 1 | NT$72.830 | NT$72.83 |
| Total Price | NT$72.83 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | NT$72.830 |
| 10+ | NT$26.570 |
| 100+ | NT$26.040 |
| 500+ | NT$25.510 |
| 1000+ | NT$24.980 |
| 5000+ | NT$24.450 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STB8NM60T4Copy |
| Manufacturer Standard Lead Time | 26 weeks |
| Order Code | Re-Reel2344089RL Cut Tape2344089 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 650V |
| Continuous Drain Current Id | 8A |
| Drain Source On State Resistance | 0.9ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 100W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The STB8NM60T4 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESH™ horizontal layout. The resulting product has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
- 100% Avalanche tested
- High dV/dt and avalanche capabilities
- Low gate input resistance
Applications
Industrial, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 8A |
| Transistor Case Style | TO-263 (D2PAK) |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 100W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 650V |
|---|---|
| Drain Source On State Resistance | 0.9ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 4V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .001921 |